tm march 2007 FDS8813NZ n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation FDS8813NZ rev.c www.fairchildsemi.com 1 FDS8813NZ n-channel powertrench ? mosfet 30v, 18.5a, 4.5m features ? max r ds(on) = 4.5m at v gs = 10v, i d = 18.5a ? max r ds(on) = 6.0m at v gs = 4.5v, i d =16a ? hbm esd protection level of 5.6 k v typical (note 3) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process that has been especially tailored to mini mize the on-state resistance. this device is well suited for power management and load switching applications common in notebook computers and portable battery packs. mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (note 1a) 18.5 a -pulsed 74 e as single pulse avalanche energy (note 4) 337 mj p d power dissipation (note 1a) 2.5 w power dissipation (note 1b) 1.0 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 25 c/w r ja thermal resistance, junction to ambient (note 1a) 50 r ja thermal resistance, junction to ambient (note 1b) 125 device marking device reel size tape width quantity FDS8813NZ FDS8813NZ 13? 12mm 2500 units pin 1 so-8 d d d d s s s g d d d d g s s s
FDS8813NZ n-channel powertrench ? mosfet FDS8813NZ rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 20 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 1 a i gss gate to source leakage current v gs = 20v, v ds = 0v 10 a on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1 1.8 3 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c ?6 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 18.5a 3.8 4.5 m v gs = 4.5v, i d = 16a 4.7 6.0 v gs = 10v, i d = 18.5a, t j = 125 c 5.1 6.6 g fs forward transconductance v ds = 5v, i d = 18.5a 74 s (note 2) dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz 3115 4145 pf c oss output capacitance 580 775 pf c rss reverse transfer capacitance 345 520 pf r g gate resistance f = 1mhz 1.8 switching characteristics t d(on) turn-on delay time v dd = 15v, i d = 18.5a v gs = 10v, r gen = 6 13 24 ns t r rise time 8 16 ns t d(off) turn-off delay time 39 63 ns t f fall time 7 14 ns q g total gate charge v gs = 0v to 10v v dd = 15v i d = 18.5a 55 76 nc q g total gate charge v gs = 0v to 5v 28 40 nc q gs gate to source charge 9 nc q gd gate to drain ?miller? charge 10 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.1a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 18.5a, di/dt = 100a/ s 32 47 ns q rr reverse recovery charge 27 41 nc notes: 1. r ja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as t he solder mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 2. pulse test: pulse width < 300 us, duty cycle < 2%. 3. the diode connected between the gate and source serves only as protection against esd . no gate overvoltage rating is implie d. 4. starting t j = 25c, l = 3mh, i as =15a, v dd = 30v, v gs = 10v . a) 50c/w when mounted on a 1in 2 pad of 2 oz copper. b) 125c/w when mounted on a minimum pad .
FDS8813NZ n-channel powertrench ? mosfet FDS8813NZ rev.c www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 15 30 45 60 75 v gs = 10.0v v gs = 4.0v v gs = 3.0v v gs = 3.5v v gs = 4.5v pulse duration = 80 s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 01530456075 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 4.5v v gs = 3.5v v gs = 10.0v v gs = 3.0v v gs = 4v pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 s duty cycle = 0.5%max i d =18.5a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 246810 3 4 5 6 7 8 9 10 pulse duration = 80 s duty cycle = 0.5%max t j = 125 o c t j = 25 o c i d =9.5a r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.5 2.0 2.5 3.0 3.5 4.0 0 15 30 45 60 75 pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDS8813NZ n-channel powertrench ? mosfet FDS8813NZ rev.c www.fairchildsemi.com 4 figure 7. 0 102030405060 0 2 4 6 8 10 v dd = 15v v dd =20v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 10v id = 18.5a gate charge characteristics figure 8. 0.1 1 10 100 1000 10000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 50 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) 30 u n c l a m p e d i n d u c t i v e switching capability figure 10. 0 5 10 15 20 25 30 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 v gs = 0v t j = 25 o c t j = 150 o c v gs , gate to source voltage(v) i g , gate leakage current(a) gate leakage current vs gate to source voltage f i g u r e 1 1 . m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature 25 50 75 100 125 150 0 5 10 15 20 r ja = 50 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t a , ambient temperature ( o c ) figure 12. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1ms 100ms r ds(on) limited 100 1s dc 10s 10ms single pulse t j = max rated r ja = 125 o c/w t a = 25 o c i d , drain current (a) v ds , drain to source voltage (v) f o r w a r d b i a s s a f e operating area typical characteristics t j = 25c unless otherwise noted
FDS8813NZ n-channel powertrench ? mosfet FDS8813NZ rev.c www.fairchildsemi.com 5 figure 13. single pulse maximum power dissipation 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 1000 3000 r ja = 125 o c/w v gs = 10v p ( pk ) , peak transient power (w) t , pulse width (s) single pulse t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - figure 14. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.0001 0.001 0.01 0.1 1 1 r ja = 125 o c/w duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a transient thermal response curve typical characteristics t j = 25c unless otherwise noted
FDS8813NZ n-channel powertrench ? mosfet ?2007 fairchild semiconductor corporation www.fairchildsemi.com trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worl dwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critica l components in life support devices or systems without the express written approval of fa irchild semiconduct or corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with in structions for use provided in the labeling, can be reasonably expec ted to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator ? gto ? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this datasheet contains the des ign specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be published at a later date. fairch ild semiconductor reserves the right to make changes at any ti me without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specific ations on a product that has been discontinued by fairchild semiconduc tor.the datasheet is printed for reference information only. rev. i24 tm tm
|
